器件名称: NCE0157
功能描述: NCE N-Channel Enhancement Mode Power MOSFET
文件大小: 438.59KB 共7页
简 介:Pb Free Product
http://www.ncepower.com
NCE0157
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE0157 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS = 100V,ID =57A RDS(ON) < 23m @ VGS=10V (Typ:13.3m) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram
Application
● ● ● Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment
100% UIS TESTED! 100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking NCE0157 Device NCE0157 Device Package TO-220 Reel Size Tape width Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS
Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS
Limit
100 ±20 57 40 190 200 1.61 580 -55 To 150
Unit
V V A A A W W/℃ mJ ℃
ID
ID (100℃)
IDM PD
TJ,TSTG
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
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Thermal Characteristic
Therma……
