器件名称: 2N3866A
功能描述: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
文件大小: 371.07KB 共5页
简 介:2N3866 / 2N3866A
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product
1. Emitter 2. Base 3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 30 55 3.5 400 Unit Vdc Vdc Vdc mA
Thermal Data
P
D Total Device Dissipation Derate above 25 C 5.0 28.6 Watts mW/ C
2N3866.PDF 10-28-02
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2N3866 / 2N3866A
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off)
Symbol BVCER BVCEO BVCBO BVEBO ICEO ICEX Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IE = 0, IC = 0.1 mAdc) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, IB = 0) Collector Cutoff Current (VCE = 55 Vdc, VBE = 1.5 Vdc) 55 30……
