器件名称: HFD4N50
功能描述: 500V N-Channel MOSFET
文件大小: 865.85KB 共8页
简 介:HFD4N50 / HFU4N50
July 2005
BVDSS = 500 V
HFD4N50 / HFU4N50
500V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V 100% Avalanche Tested
RDS(on)
typ =
2.0 Ω
ID = 2.6 A
D-PAK
2 1 1 3 2 3
I-PAK
HFD4N50
HFU4N50
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TC=25℃ unless otherwise specified
Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed
(Note 1)
Value 500 2.6 1.64 10.4 ±30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃
440 2.6 4.5 4.5 2.5 45 0.36 -55 to +150 300
Total Power Dissipation (TA=25℃) * Power Dissipation (TC = 25℃) - Derate above 25℃
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient* Junction-to-Ambient Parameter Typ. ---Max. 2.78 50 110 ℃/W Units
* When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0,July 2005
HFD4N50 / HFU4N50……
