器件名称: NCE7578
功能描述: NCE N-Channel Enhancement Mode Power MOSFET
文件大小: 440.4KB 共7页
简 介:NCE7578
http://www.ncepower.com
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
ID
Product Summary
BVDSS RDS(ON) typ. typ. max. 84 6.8 8.0 78 V m m A
Features
● VDS=75V；ID=78A@ VGS=10V； RDS(ON)<8m @ VGS=10V ● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation 100% UIS TESTED!
Application
● ● ● Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply TO-220-3L top view Schematic diagram
Package Marking And Ordering Information
Device Marking NCE7578 Device NCE7578 Device Package TO-220-3L Reel Size Tape width Quantity -
Table 1.
Absolute Maximum Ratings (TA=25℃) Parameter
Symbol
VDS VGS ID (DC) ID (DC)
Value
75 ±25 78 75 300 30 160 1.07 550 -55 To 175
Unit
V V A A A V/ns W W/℃ mJ ℃
Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed Peak diode recovery voltage Maximum Power Dissipation(Tc=25℃) Derating factor Single pulse avalanche energy
(Note 2) (Note 1)
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