器件名称: IRF830
功能描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
文件大小: 95.81KB 共4页
简 介:IRF830
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
500V 1.5Ω 4.5A
S
Description
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits.
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 500 ±20 4.5 2.8 18 74 0.59
2
Units V V A A A W W/ ℃ mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
101 4.5 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.7 62 Unit ℃/W ℃/W
200420071-1/4
Data & specifications subject to change without notice
IRF830
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Sou……
