器件名称: 2N3906N
功能描述: PNP Silicon Transistor
文件大小: 176.78KB 共3页
简 介:Semiconductor
2N3906N
PNP Silicon Transistor
Descriptions
General small signal application Switching application
Features
Low collector-emitter saturation voltage : 0.4V (Max.) @ IC=-50mA, IB=-5mA Low collector output capacitance : 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz Complementary pair with 2N3904N
Ordering Information
Type NO. 2N3906N Marking 2N3906 Package Code T0-92N
Outline Dimensions
4.20~4.40
4.20~4.40
unit : mm
2.25 Max.
0.52 Max.
13.50~14.50
0.90 Max. 1.27 Typ.
2.14 Typ.
1 2 3
3.55 Typ
3.09~3.29
0.40 Max.
PIN Connections 1. Emitter 2. Base 3. Collector
KSD-T0C039-000
1
2N3906N
Absolute Maximum Ratings
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC TJ Tstg
Rating
-40 -40 -5 -200 400 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Turn on delay time Rise time Storage time Fall Time
Ta=25°C
Symbol
BVCEO ICBO IEBO hFE VCE(sat) VBE fT Cob td tr tstg tf
Test Condition
IC=-1mA, IB=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-10mA IC=-50mA, IB=-5mA VCE=-1V, IC=-10mA VCE=-20V, IC=-10mA VCB=-5V, IE=0, f=1MHz VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-……
