器件名称: 2N3999
功能描述: NPN POWER SWITCHING SILICON TRANSISTOR
文件大小: 65.65KB 共2页
简 介:TECHNICAL DATA
NPN POWER SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/374 Devices 2N3996 2N3997 2N3998 2N3999 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +25 C @ TC = +1000C (3) Operating & Storage Junction Temperature Range
0 (2)
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC
Value
80 100 8.0 0.5 5.0 10(1) 2.0 30 -65 to +200 Max. 3.33
Unit
Vdc Vdc Vdc Adc Adc W
0
C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) This value applies for tp ≤ 1.0 ms, duty cycle ≤ 50% 2) Derate linearly 11.4 mW/0C for TA > +250C 3) Derate linearly 300 mW/0C for TC > +1000C Unit 0 C/W
TO-111*
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO V(BR)CBO ICEO ICES IEBO Min. 80 100 10 200 200 10 Max. Unit Vdc Vdc Adc ηAdc ηAdc Adc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 50 mAdc Collector-Emitter Breakdown Voltage IC = 10 Adc Collector-Emitter Cutoff Current VCE = 60 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 0 Emitter-Base Cutoff Current VEB = 5.0 Vdc VEB = 8.0 Vdc
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2N3996, 2N3997, 2N3998, 2N3999 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
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