器件名称: RFS1003
功能描述: 5.1-5.9 GHz U-NII Power Amplifier
文件大小: 75.07KB 共4页
简 介:RFS1003
5.1-5.9 GHz U-NII Power Amplifier
Applications
U-NII fixed-wireless CPE 5 GHz ISM band wireless equipment WLAN/802.11a/HIPERLAN/2
Product Description
The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the device is ideal as a final stage for wireless applications requiring high transmit linearity. The input of the PA is matched to 50 ohms and the output can be easily matched for optimum linearity and power performance at the desired frequency of operation between 5.1 and 5.9 GHz.
GND
GND
GND
VD2
VD1
24
N/C
23
22
21
20
19
N/C
1 2
Interstage Match
18 17 16
Input Match
N/C
N/C
GND
GND
3 4 5 6
Interstage Match
RF OUT
Product Features
29 dBm P1dB@7V 24 dBm P1dB@3V 20 dB gain Input matched to 50 ohms Simple output matching
RF IN
15 14 13
RF OUT
GND
RF OUT
N/C
GND
7
GND
8
VG1
9
GND
10
VG2
11
GND
12
VG3
Functional Block Diagram
1.00 0.80 4.00
4 0.45 0.35 0.275 0.225 Pin 1
24 1
1 ALL DIMENSIONS ARE IN MILLIMETERS, ANGLES IN DEGREES. 2 THE TERMINAL #1 IDENTIFIER AND PAD NUMBERING CONVENTION SHALL CONFORM TO JESD 95-1 SPP-012 3 LEAD COPLANARITY: 0.05 MAX. 4 DIMENSION APPLIES TO METALLIZED PAD AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM PAD TIP.
INDEX AREA
4.00
0.50 TYP
0.05
1.00 2.80 SQ
TOP VIEW SIDE VIEW BOTTOM VIEW
4x4 mm Package Outline
05/2003
RFS1003
5.1-5.9 GHz U-NII Power Amplifier
Paramet……
