器件名称: 2N7002
功能描述: NCE N-Channel Enhancement Mode Power MOSFET
文件大小: 307.25KB 共7页
简 介:Pb Free Product
http://www.ncepower.com
2N7002
NCE N-Channel Enhancement Mode Power MOSFET
GENERAL FEATURES
● VDS = 60V,ID = 0.115A RDS(ON) < 3 @ VGS=4.5V RDS(ON) < 2 @ VGS=10V Schematic diagram ● Lead free product is acquired ● Surface Mount Package
Application
●Direct Logic-Level Interface: TTL/CMOS ●Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. ●Battery Operated Systems ●Solid-State Relays Marking and pin Assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking 7002 Device 2N7002 Device Package SOT-23 Reel Size 180mm Tape width 8 mm Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ID Drain Current-Continuous@ Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA
Limit
60 ±20 0.115 0.8 0.2 -55 To 150
Unit
V V A A W ℃
625
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition
Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=60V,VGS=0V
Min
60
Typ
Max
Unit
V
1
μA
Wuxi NCE Power Semiconductor Co., Ltd
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Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Trans……