器件名称: SBN13003A
功能描述: High Voltage Fast -Switching NPN Power Transistor
文件大小: 363.18KB 共5页
简 介:SBN13003A
High Voltage Fast -Switching NPN Power Transistor
Features
Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA
General Description
This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol
VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG
Parameter
Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc=25℃ Operation Junction temperature Storage Temperature
Test Conditions
VBE=0 IB=0 IC=0
Value
700 400 9.0 1.5 3.0 0.75
Units
V V V A A A A W ℃ ℃
tP=5ms
1.5 18 -40~150 -40~150
Tc:Case temperature(good cooling)
Thermal Characteristics
Symbol
RQJA
Parameter
Thermal Resistance Junction to Ambient
value
13.6
Units
℃/W
Rev.A Sep.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
SBN13003A
Electrical Characteristics(Tc=25℃
Symbol
VCEO(sus) unless otherwise noted)
Parameter
Collector-Emitter Breakdown Voltage
Test Conditions
Ic=10mA,Ib=0 Ic=0.5A,Ib=0.1A
Value
Min 400 Typ Max 0.3 0.5 1.0 1.0 1.2 1.0 5.0 10 5 30 25
Units
V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic=1.0A,Ib=0.25A Ic=1.5A,Ib=0.5A Ic=0.5A,Ib=0.1A
V
VBE(sat)
Base -Emitter Saturation voltage Ic=1.0A,Ib=0.25A Collector Base Cutoff Current Vcb=700V Vcb=700V,Tc=100℃ Vce=2V,Ic=0.5A
V
ICBO (Vbe=-1.5v) hFE DC Current Gain
mA
Vce=……
