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WTD8A60

器件名称: WTD8A60
功能描述: Sensitive Gate Triac
文件大小: 402.1KB    共5页
生产厂商: WINSEMI
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简  介:D8 A60 WT WTD8 D8A60 Sensitive Gate Triac Features Repetitive Peak off -State Voltage:600V R.M.S On-State Current(IT(RMS)=8A) High Commutation dv/dt Isolation Voltage (VISO=1500V AC) General Description Sensitive gate triggering Triac is suitable for direct couplingto TTL , CMOS and application such as various logic Functions, low power AC switching applications,such as fanspeed,small light controllers and home appliance equipment. Absolute Maximum Ratings (TJ=25℃ symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM VISO TJ TSTG unless otherwise specified) Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current condition Tc=89℃ One Cycle, 50Hz/60Hz, Ratings 600 8.0 80/88 Units V A A A2s W W A V V ℃ ℃ Peak,Non-Repetitive I 2t Peak Gate Power Dissipation Average Gate Power dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown voltage(R.M.S.) Operating Junction Temperature Storage Temperature A.C 1 minute 32 5.0 0.5 2.0 10 1500 -40~125 -40~150 Thermal Characteristics Symbol RθJc Parameter Thermal Resistance Junction to Case Value 3.7 Units ℃/W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. A60 WTD8 D8A60 Electrical Characteristics(Tc=25℃ unless otherwise noted) Symbol IDRM Current VTM I+GT1 IIV+GT1 V-GT1 V-GT3 VGD (dv/dt)c Voltage at Commutation IH Holding Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State TJ=125℃,VD=1/2VDRM TJ=125℃,[di/dt]……
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WTD8A60 Sensitive Gate Triac WINSEMI
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