器件名称: MJE13004
功能描述: Silicon NPN Power Transistors
文件大小: 124.91KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE13004
DESCRIPTION ·With TO-220C package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
·
Absolute maximum ratings (Tc=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg
固电 IN
Collector-base voltage
体 导 半
PARAMETER
Collector-emitter voltage
Emitter-base voltage
Collector current (DC) Collector current-Peak
CHA
EM S E NG
Open base
Open emitter
D N O IC
CONDITIONS
R O T UC
VALUE 600 300 9 4 8 2 4
UNIT V V V A A A A W
Open collector
Base current Base current-PeaK Ta=25℃ Total power dissipation TC=25℃ Junction temperature Storage temperature
2 75 150 -65~150 ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICEV IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off curre……
