器件名称: MJE13005D
功能描述: TRIPLE DIFFUSED NPN TRANSISTOR
文件大小: 51.65KB 共3页
简 介:SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base drive requirement.
A
MJE13005D
TRIPLE DIFFUSED NPN TRANSISTOR
O C F
E
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current DC Pulse
)
SYMBOL VCBO VCEO VEBO IC ICP IB ) PC Tj Tstg RATING 800 400 10 5 10 2 75 150 -55 150
Equivalent Circuit
C
G B
UNIT
I
Q
V V V
K M L J D
P
A A
N
N
H
1. BASE
Collector Power Dissipation (Tc=25 Junction Temperature Storage Temperature Range
W
2. COLLECTOR 3. EMITTER
DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q
TO-220AB
B
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Emitter Cut-off Current DC Current Gain
)
E
SYMBOL IEBO hFE(1) hFE(2) VCE(sat)
TEST CONDITION VEB=9V, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A IC=0.5A, IB=0.1A IC=2A, IB=0.5A IC=4A, IB=1A IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, f=1MHz VCE=10V, IC=0.5A
OUTPUT 300S IB1 IB2 I B2 150 INPUT I B1
MIN. 18 8 4 2 -
TYP. 65 800 1.4 1.9
MAX. 10 35 0.5 0.6 1 1.6 0.15 5 0.8 1.6 -
UNIT A
Collector-Emitter Saturation Voltage
V
Base-Emitter Saturation Voltage Collector Output Capacitance Transit……
