器件名称: MJE16004
功能描述: Silicon NPN Power Transistors
文件大小: 124.69KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220 package ·High voltage ,high speed APPLICATIONS ·Switching regulators ·High resolution deflection circuits ·Inverters ·Motor drives
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
MJE16004
·
Absolute maximum ratings(Tc=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg
固电
Collector-base voltage
体 导 半
PARAMETER
Collector-emitter voltage
INC
Emitter-base voltage
Collector current (DC)
EM S E G N A H
Open base TC=25℃
Open emitter
D N O IC
CONDITIONS
R O T UC
VALUE 850 450 6 5 10 4 8 80 150 -65~150
UNIT V V V A A A A W ℃ ℃
Open collector
Collector current-Peak
Base current Base current-Peak Total power dissipation Junction temperature Storage temperature
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.56 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEV IEBO hFE COB PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector outoput capacitance CONDITIONS IC=100mA; IB=0 IC=1.5A ;IB=0.15A IC=3A ;IB=0.3A TC=100℃ IC=3A ;IB=0.3A TC=100℃ VCEV=850V; VBE=1.5V TC=100℃ VEB=6V; IC=0 IC=5A ; VCE=5V IE=0 ; VCB=10V;f=1.0kHz 7 MIN……