器件名称: MJE170
功能描述: Silicon PNP Power Transistors
文件大小: 122.43KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
MJE170/171/172
DESCRIPTION ·With TO-126 package ·Complement to type MJE180/181/182 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications
PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
·
Absolute Maximun Ratings (Ta=25℃)
SYMBOL
VCBO
固电
体 导 半
PARAMETER
A H C IN
Collector current
Collector-base voltage
S E NG
MJE171 MJE172 MJE170 MJE171 MJE172
MJE170
Open emitter
C I M E
CONDITIONS
OND
R O T UC
VALUE -60 -80 -100 -40
UNIT
V
VCEO
Collector-emitter voltage
Open base
-60 -80
V
VEBO IC ICM IB
Emitter-base voltage
Open collector
-7 -3 -6 -1
V A A A
Collector current-peak Base current Ta=25℃
1.5 W 12.5 150 -65~150 ℃ ℃
PC
Collector power dissipation TC=25℃
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER MJE170 V(BR)CEO Collector-emitter breakdown voltage MJE171 MJE172 VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage IC=-500mA ;IB=-50mA IC=-1.5A ;IB=-150mA IC=-3A ;IB=-600mA IC=-1.5A ;IB=-150mA IC=-3A ;IB=-600mA IC=-500mA ; VCE=-1V VCB=-60V; IE=0 TC=150℃ V……
