器件名称: MMBT2907ALT1
功能描述: SOT-23 Plastic-Encapsulate Transistors
文件大小: 39.69KB 共1页
简 介:@vic
MMBT2907ALT1
SOT-23 Plastic-Encapsulate Transistors
MMBT2907ALT1
FEATURES Power dissipation PCM: 0.3
TRANSISTOR (PNP)
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
W (Tamb=25℃)
1. 0
2. 4 1. 3
0. 95
Collector current -0.6 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE=-10V, IC= -1mA IC=-500mA, IB=-50 mA IC= -500mA, IB=-50 mA VCE=-20V, IC= -50mA Transition frequency
2. 9
1. 9
0. 95
Unit: mm
unless otherwise specified)
Test conditions MIN -60 -60 -5 -0.1 -0.1 -0.1 100 50 -1 -2 V V 300 TYP MAX UNIT V V V A A A
Ic= -10A , IE=0 IC= -10 mA , IB=0 IE= -10A, IC=0 VCB= -50V, IE=0 VCB= -3V, IB=0 VEB= -3V, IC=0 VCE=-10V, IC= -150mA
fT f = 100MHz
200
0. 4
MHz
DEVICE MARKING:
MMBT2907ALT1 =2F
Copyright @vic Electronics Corp.
Website http://www.avictek.com
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