器件名称: MMBT5401LT1
功能描述: SOT-23 Plastic-Encapsulate Transistors
文件大小: 44.6KB 共1页
简 介:@vic
SOT-23 Plastic-Encapsulate Transistors
MMBT5401LT1
FEATURES Power dissipation PCM:
TRANSISTOR (PNP)
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
0.3
W (Tamb=25℃)
0. 95
1. 0
-
2. 4 1. 3
Collector current ICM: -0.6 A Collector-base voltage -160 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
2. 9
1. 9
0. 95
Unit: mm
unless otherwise specified)
Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1)
Ic= -100 A, IE=0 Ic= -1 mA, IB=0 IE= -10A, IC=0 VCB=-120V, IE=0 VEB=-4V, IC=0 VCE= -5V, IC= -1mA VCE= -5V, IC=-10mA VCE= -5V, IC=-50mA IC=-50mA, IB= -5mA IC= -50mA, IB= -5mA VCE= -5V, IC= -10mA
-160 -150 -5 -0.1 -0.1 80 100 50 -0.5 -1 200
0. 4
V V V
A A
DC current gain
HFE(2) HFE(3)
Collector-emitter saturation voltage Base-emitter voltage Transition frequency saturation
VCE(sat) VBE(sat)
V V
fT
f=30MHz
100
MHz
DEVICE MARKING
MMBT5401LT1=2L
……
