器件名称: FQP10N50CF_08
功能描述: 500V N-Channel MOSFET Improved dv/dt capability
文件大小: 992.82KB 共10页
简 介:FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET
December 2006
FRFET
FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET
Features
10A, 500V, RDS(on) = 0.61 @VGS = 10 V Low gate charge (typical 43 nC) Low Crss (typical 16pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
FQP10N50CF
10 6.35
(Note 1)
FQPF10N50CF
500 10* 6.35* 40* ± 30 388 10 14.3 4.5
Unit
V A A A V mJ A mJ V/ns
- Pulsed
40
143 1.14 -5……
