器件名称: 9C12063A10R0FKHFT
功能描述: RF Power Field Effect Transistor
文件大小: 813.97KB 共16页
简 介:Freescale Semiconductor Technical Data
Document Number: MRF8S9102N Rev. 0, 2/2011
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 23.1 23.1 22.8 ηD (%) 36.4 36.4 36.6 Output PAR (dB) 6.3 6.2 6.1 ACPR (dBc) --35.5 --36.1 --35.8
MRF8S9102NR3
865-960 MHz, 28 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Typical Pout @ 1 dB Compression Point 100 Watts CW 880 MHz Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 865 MHz 880 MHz 895 MHz Gps (dB) 22.9 23.0 22.8 ηD (%) 35.4 35.5 35.6 Output PAR (dB) 6.4 6.2 6.0 ACPR (dBc) --34.7 --35.1 --35.7 CASE 2021-03, STYLE 1 OM-780-2 PLASTIC
Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large--Signal Impedance……
