器件名称: CY14V116F7、CY14V116G7
功能描述: 16 Mb nvSRAM是市场上最快的高容量异步非易失性RAM，存取时间可低至25 ns。赛普拉斯的新器件可选择集成实时时钟（RTC），以便在重要数据日志中标记时间。赛普拉斯的nvSRAM具有无限次读、写和恢复的特点，在85˚C的温度下数据可保存20年，65˚C下则可以保存150年。
文件大小: 1178.6KB 共31页
简 介:PRELIMINARY
CY14V116F7 CY14V116G7
16-Mbit nvSRAM with Asynchronous NAND Interface
16-Mbit nvSRAM with Asynchronous NAND Interface
Features
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Overview
Cypress nvSRAM combines high-performance SRAM cells with nonvolatile elements in a monolithic integrated circuit. The embedded nonvolatile elements incorporate the Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) technology, producing the world's most reliable nonvolatile memory. The SRAM can be read and written an infinite number of times. The nonvolatile data resides in the nonvolatile elements and does not change when data is written to the SRAM. The CY14V116F7/CY14V116G7 nvSRAM provides access through a standard asynchronous NAND interface and supports the ×8 and ×16 interface options. In the case of ×16 interface, data bytes are transmitted over the DQ[15:0] lines and has double the throughput compared to the DQ[7:0] bus. The CY14V116F7/ CY14V116G7 uses a highly multiplexed DQ bus to transfer data, addresses, and instructions. All addresses and commands are always transmitted over the data bus DQ[7:0]. Therefore, in the case of the ×16 bus interface, the upper eight data bits DQ[15:8] become don’t care bits during the address and command cycles. The CY14V116F7/CY14V116G7 uses five control pins (CLE, ALE, CE, RE, and WE) to transfer command, address, and data during read and write operations. Additional I/O pins, such as write protect (WP), ready/busy (R/B), and HSB STORE, are used to support features in the device. The async……
