器件名称: TM1001
功能描述: 2.4GHz GaAs HBT Power Amplifier with Power Detector, for Bluetooth, Zigbee, Audi/Vidoe and WIFI.
文件大小: 281.06KB 共14页
简 介:TM1001
General Description
2.4-2.5GHz ISM Band Power Amplifier
The TM1001 is manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The device is a low cost, high linearity, medium power, high efficiency amplifier IC designed for IEEE 802.11b/g, Bluetooth Class 1, and other application in the 2.4GHz ISM band. The device also features analog power control to optimize transmit power while maximizing battery life in portable equipment. The device includes an integrated power detector circuit for closed loop control of output power. The TM1001 is packaged in a compact 3mm by 3mm QFN package with a backside ground.
Features
Integrated Power Detector Circuit Analog Gain Control and Power control. QFN-12L 3x3 mm with thermal ground RoHS compliant MSL 1
Functional Block Diagram
VCC1 VCC1 GND
GND
RF OUT/VCC2
RF IN
RF OUT
Applications
GND
RF OUT Control Circuit
Bluetooth PA (Class 1) WLAN 802.11 b/g Wireless Data Terminal Cordless Handset Portable Battery Powered Equipment
DET
PD
APC
Absolute Maximum Ratings
Parameter VCC Supply Voltage APC Control Voltage RF Input Power Operating Temperature Storage Temperature Maximum Rating 0 to 6 0 to 6 +5 -40 to +85 -55 to +150 Unit V V dBm o C o C
Notes: 1. Operation of this device in excess of any maximum rating as specified above may cause permanent damage to the device. 2. Caution! ESD Sensitive Device.
Taiwan Microelectronics Technologies Inc. reserves the right to change products an……
