器件名称: 2SA1979N
功能描述: PNP Silicon Transistor
文件大小: 236.11KB 共4页
简 介:Semiconductor
2SA1979N
PNP Silicon Transistor
Description
Medium power amplifier
Features
Large collector current : IC = -500mA Low collector saturation voltage enabling low-voltage operation : VCE(sat) = -0.25 Max. Complementary pair with 2SC5342N
Ordering Information
Type NO. 2SA1979N Marking A1979 Package Code TO-92N
Outline Dimensions
unit : mm
4.20~4.40
4.20~4.40
2.25 Max.
0.52 Max.
13.50~14.50
0.90 Max. 1.27 Typ.
2.14 Typ.
1 2 3
3.55 Typ
3.09~3.29
0.40 Max.
PIN Connections 1. Emitter 2. Collector 3. Base
KSD-T0C031-000
1
2SA1979N
Absolute Maximum Ratings
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC TJ Tstg
Rating
-40 -32 -5 -500 400 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Ta=25°C
Symbol
BVCEO ICBO IEBO hFE* VCE(sat) VBE fT Cob
Test Condition
IC=-1mA, IB=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz
Min. Typ. Max.
-32 70 -0.75 200 7.5 -0.1 -0.1 240 -0.25 -1.0 -
Unit
V A A V V MHz pF
*
: hFE rank / O : 70~140, Y : 120~240
KSD-T0C031-000
2
2SA1……
