器件名称: 2SA1979S
功能描述: PNP Silicon Transistor (Medium power amplifier)
文件大小: 231.63KB 共4页
简 介:Semiconductor
2SA1979S
PNP Silicon Transistor
Description
Medium power amplifier
Features
Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with 2SC5342S
Ordering Information
Type NO. 2SA1979S Marking AA : hFE rank Package Code SOT-23
Outline Dimensions
unit : mm
2.3~2.5 1.2~1.4
1
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
0.2 Min.
1.12 Max.
2.8~3.0
KST-2035-002
0.094~0.174
PIN Connections 1. Base 2. Emitter 3. Collector
0.38
0~0.1
1
2SA1979S
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-40 -32 -5 -500 200 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob
Test Condition
IC=-100A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz
Min. Typ. Max.
-40 -32 -5 70 200 7.5 -0.1 -0.1 240 -0.25 -
Unit
V V V A A V MHz pF
*
: hFE rank / O : 70~140, Y : 120~2……
