器件名称: 2SA1980N
功能描述: PNP Silicon Transistor
文件大小: 240.31KB 共4页
简 介:Semiconductor
2SA1980N
PNP Silicon Transistor
Description
General small signal amplifier
Features
Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343N
Ordering Information
Type NO. 2SA1980N
Marking A1980
Package Code TO-92N
Outline Dimensions
unit : mm
4.20~4.40
4.20~4.40
2.25 Max.
0.52 Max.
13.50~14.50
0.90 Max. 1.27 Typ.
2.14 Typ.
1 2 3
3.55 Typ
3.09~3.29
0.40 Max.
PIN Connections 1. Emitter 2. Collector 3. Base
KSD-T0C038-001
1
2SA1980N
Absolute Maximum Ratings
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC TJ Tstg
Rating
-50 -50 -5 -150 400 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCEO ICBO IEBO hFE* VCE(sat) VBE fT Cob
Test Condition
IC=-1mA, IB=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-6V, IC=-2mA VCE=-10V, IC=-10mA VCB=-10V, IE=0, f=1MHz
Min. Typ. Max.
-50 70 -0.67 200 4 -0.1 -0.1 700 -0.3 -0.9 -
Unit
V A A V V MHz pF
*: hFE rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700.
KSD-T0C038-001
2
2SA……
