器件名称: 2SA1980S
功能描述: PNP Silicon Transistor (General small signal amplifier)
文件大小: 232.55KB 共4页
简 介:Semiconductor
2SA1980S
PNP Silicon Transistor
Description
General small signal amplifier
Features
Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343S
Ordering Information
Type NO. 2SA1980S Marking CA : hFE rank Package Code SOT-23
Outline Dimensions
2.3~2.5 1.2~1.4
unit : mm
1
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
0.2 Min.
1.12 Max.
0.094~0.174
2.8~3.0
PIN Connections 1. Base 2. Emitter 3. Collector
0.38
KST-2033-003
0~0.1
1
2SA1980S
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-50 -50 -5 -150 200 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Noise figure
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob NF
Test Condition
IC=-100A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA f=1KHz, Rg=10K
Min. Typ. Max.
-50 -50 -5 70 80 4 -0.1 -0.1 700 -0.3 7 10
Unit
V V V A A V MHz pF ……
