器件名称: SPA-2318
功能描述: 2150 MHz 1 Watt Power Amplifier with Active Bias
文件大小: 268.64KB 共6页
简 介:Preliminary
Product Description
Stanford Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications.
SPA-2318
2150 MHz 1 Watt Power Amplifier with Active Bias
Product Features High Linearity Performance:
+47 dBm Typ. OIP3 at 2140 MHz +21.7 dBm W-CDMA Channel Power at -45 dBc ACP
VC1 VBIAS RFIN VPC2
Active Bias
RFOUT/ VC2
On-chip Active Bias Control High Gain: 23 dB Typ. Patented High Reliability GaAsHBT Technology Surface-Mountable Plastic Package Applications W-CDMA Systems Multi-Carrier Applications
Symbol f0 P 1dB S 21 VSWR OIP3 NF Icc Rth j-l
Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25C, Vcc=5.0V Frequency of Operation Output Power at 1dB Compression Small Signal Gain Input VSWR Output Third Order Intercept Point Power out per tone = +14dBm Noise Figure Device Current
Ibias = 10mA, Ic1 = 70mA, Ic2 = 320 mA
Units MHz dB m dB dB m dB mA C/W
Min. 2110
Typ. 2140 28 23 1.5:1 47 5.0 400 32
Max. 2170
Thermal Resistance (junction - lead)
The information provided herein is believed t……
