器件名称: VG26V18165CJ-6
功能描述: 1,048,576 x 16 - Bit CMOS Dynamic RAM
文件大小: 231.88KB 共27页
简 介:VIS
Description
VG26(V)(S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM
The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application. A new refresh feature called “self-refresh” is supported and very slow CBR cycles are being performed. lt is packaged in JEDEC standard 42-pin plastic SOJ.
Features
Single 5V( ± 10 %) or 3.3V( ± 10 %) only power supply High speed tRAC acess time: 50/60ns Low power dissipation - Active wode : 5V version 660/605 mW (Mas) 3.3V version 432/396 mW (Mas) - Standby mode: 5V version 1.375 mW (Mas) 3.3V version 0.54 mW (Mas) Extended - data - out(EDO) page mode access I/O level: TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V) 1024 refresh cycle in 16 ms(Std.) or 128 ms(S-version) 4 refresh modes: - RAS only refresh - CAS - before - RAS refresh - Hidden refresh - Self-refresh(S-version)
Document:1G5-0147
Rev.1
Page 1
VIS
Pin Configuration 42-Pin 400mil Plastic SOJ
VG26(V)(S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM
VCC DQ1 DQ2 DQ3 DQ4 VCC DQ5 DQ6 DQ7 DQ8 NC NC WE RAS NC NC A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8
42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22
VSS DQ16 DQ15 DQ14 DQ13 VSS DQ12 DQ11 DQ10 DQ9 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS
VG……
