器件名称: 29F002
功能描述: 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
文件大小: 189.24KB 共22页
简 介:M29F002BT, M29F002BNT M29F002BB, M29F002BNB
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
s
SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45 ns PROGRAMMING TIME – 8 s by Byte typical 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 4 Main Blocks
PLCC32 (K) TSOP32 (N) 8 x 20mm
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s
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PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits
32
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ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
1
PDIP32 (P)
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UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION – Standby and Automatic Standby
VCC
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Figure 1. Logic Diagram
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100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M29F002BT: B0h – Top Device Code M29F002BNT: B0h – Bottom Device Code M29F002BB: 34h – Bottom Device Code M29F002BNB: 34h
G RP A0-A17 W E
18
8 DQ0-DQ7 M29F002BT M29F002BB M29F002BNT M29F002BNB
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VSS
AI02957B
April 2002
1/22
M29F002BT, M29F002BB, M29F002BNT, M29F002BNB
Figure 2. PLCC Connections Figure 3. TSOP Connections
1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7
9
M29F002BT M29F002BB M29F002BNB
A11 A9 A8 A13 A14 A17 W VCC RP A16 A15 A12 A7 A6 A5 A4
1
32
25
8 9
M29F002BT M29F002BB
25……
