器件名称: 2N6255
功能描述: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
文件大小: 259.36KB 共4页
简 介:140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N6255
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50%
1. Emitter 2. Base 3. Collector
TO-39 DESCRIPTION:
The 2N6255 is a silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier, pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 18 36 4.0 1 Unit Vdc Vdc Vdc A
Thermal Data
P
D Total Device Dissipation @ TA = 25C Derate above 25C 5.0 28.5 Watts mW/ C
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2N6255
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC (off)
Symbol BVCES BVCEO BVEBO ICES ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE =0Vdc) Collector-Emitter Breakdown Voltage (IC=10 mAdc, IB=0) Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) Emitter Cutoff Current (VCB = 15 Vdc, IE = 0) Value Min. 36 18 4.0 Typ. 5.0 .25 Max. Unit Vdc Vdc Vdc mA mA
(on)
HFE DC Curr……
