器件名称: 2N6304
功能描述: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
文件大小: 115.58KB 共4页
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2N6304
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc Maximum Available Gain = 14 dB (min) @ f = 500 MHz
2 1 4 3
1. Emitter 2. Base 3. Collector 4. Case
TO-72
DESCRIPTION:
The 2N6304 is a silicon NPN transistor designed primarily for use in high gain, low noise general-purpose UHF amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 3.5 50 Unit Vdc Vdc Vdc mA
Thermal Data
P
D Total Device Dissipation @ TA = 25 C Derate above 25 C 200 1.14 mWatts mW/ C
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2N6304
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC (off)
Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 100 Adc, IE=0) Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCB = 5.0 Vdc, IE = 0 Vdc) Value Min. 15 30 3.5 Typ. Max. 10 Unit Vdc Vdc Vdc nAdc
(on)
HFE DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) 25 250 -
D……
