器件名称: 74HCT1G00
功能描述: 2-input NAND gate
文件大小: 74.03KB 共16页
简 介:INTEGRATED CIRCUITS
DATA SHEET
74HC1G00; 74HCT1G00 2-input NAND gate
Product specication Supersedes data of 2001 Mar 02 2002 May 15
Philips Semiconductors
Product specication
2-input NAND gate
FEATURES Wide supply voltage range from 2.0 to 6.0 V Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays Very small 5 pins package Output capability: standard. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. DESCRIPTION
74HC1G00; 74HCT1G00
The 74HC1G/HCT1G00 is a high speed Si-gate CMOS device. The 74HC1G/HCT1G00 provides the 2-input NAND function. The standard output currents are 12 compared to the 74HC/HCT00.
TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC 1.5 V. FUNCTION TABLE See note 1. INPUTS A L L H H Note 1. H = HIGH voltage level; L = LOW voltage level. B L H L H OUTPUT Y H H H L PARAMETER propagation delay A, B to Y input capacitance power dissipation capacitance notes 1 and 2 CONDITIONS HC1G CL = 15 pF; VCC = 5 V 7 1.5 19 HCT1G 10 1.5 21 ns pF pF UNIT
2002 May 15
2
Philips Semiconductors
Product specication
2-input NAND gate
ORDERING INFO……
