EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > CENTRAL > CZT2955PNP

CZT2955PNP

器件名称: CZT2955PNP
功能描述: 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
文件大小: 74.59KB    共2页
生产厂商: CENTRAL
下  载:    在线浏览   点击下载
简  介:CZT2955 PNP CZT3055 NPN 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2955 and CZT3055 types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 6.0 amps. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg ΘJA -65 to +150 62.5 °C °C/W VCBO VCER VCEO VEBO IC IB PD 100 70 60 7.0 6.0 3.0 2.0 UNITS V V V V A A W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO ICEV IEBO BVCER BVCEO VCE=30V VCE=100V, VEB=1.5V VEB=7.0V IC=30mA, RBE=100 IC=30mA 70 60 MAX 700 1.0 5.0 UNITS A mA mA V V * VCE(SAT) IC=4.0A, IB=400mA * VBE(ON) VCE=4.0V, IC=4.0A * hFE VCE=4.0V, IC=4.0A * hFE fT VCE=4.0V, IC=6.0A VCE=10V, IC=500mA, f=1.0MHz 1.1 1.5 20 5.0 2.5 70 V V MHz * Pulsed, 2% D.C. R3 (17-June 2004) Central TM Semiconductor Corp. CZT2955 PNP CZT3055 NPN 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN M……
相关电子器件
器件名 功能描述 生产厂商
CZT2955PNP 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR CENTRAL
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2