器件名称: CZT32C
功能描述: 2.0W COMPLEMENTARY SILICON POWER TRANSISTOR
文件大小: 102.47KB 共2页
简 介:NE
W
CZT31C NPN CZT32C PNP
Central
DESCRIPTION:
TM
Semiconductor Corp.
2.0W COMPLEMENTARY SILICON POWER TRANSISTOR
POWER
TM
223
The CENTRAL SEMICONDUCTOR CZT31C and CZT32C types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 3.0 amps.
SOT-223 CASE MAXIMUM RATINGS: (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ,Tstg ΘJA
100 100 5.0 3.0 6.0 1.0 2.0 -65 to +150 62.5
UNITS V V V A A A W
oC oC/W
ELECTRICAL CHARACTERISTICS: (TA=25oC unless otherwise noted) SYMBOL ICES ICEO IEBO BVCEO * VCE(SAT) * VBE(ON) * hFE * hFE fT * Pulsed, 2%D.C. TEST CONDITIONS VCE=100V VCE=60V VEB=5.0V IC=30mA IC=3.0A, IB=375mA VCE=4.0V, IC=3.0A VCE=4.0V, IC=1.0A VCE=4.0V, IC=3.0A VCE=10V, IC=500mA, f=1.0MHz MIN MAX 200 300 1.0 1.2 1.8 25 10 3.0 100 MHz UNITS A A mA V V V
100
294
All dimensions in inches (mm).
LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR
R2 R1
295
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