器件名称: 74HCT10D
功能描述: Triple 3-input NAND gate
文件大小: 34.29KB 共5页
简 介:INTEGRATED CIRCUITS
DATA SHEET
For a complete data sheet, please also download:
The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications The IC06 74HC/HCT/HCU/HCMOS Logic Package Information The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines
74HC/HCT10 Triple 3-input NAND gate
Product specication File under Integrated Circuits, IC06 December 1990
Philips Semiconductors
Product specication
Triple 3-input NAND gate
FEATURES Output capability: standard ICC category: SSI GENERAL DESCRIPTION
74HC/HCT10
The 74HC/HCT10 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT10 provide the 3-input NAND function. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns TYPICAL SYMBOL tPHL/ tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W): PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fO) where: fi = input frequency in MHz fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in V ∑ (CL × VCC2 × fo) = sum of outputs 2. For HC the condition is VI = GND to VCC For HCT the condition is VI = GND to VCC 1.5 V. ORDERING INFORMATION See “74HC/HCT/HCU/HCMOS Logic Package Information”. PARAMETER propagation delay nA, nB, nC to nY input capacitance power dissipation capacitance per gate notes 1 and 2 CONDITIONS HC CL = 15 pF; VCC = 5 V 9 3.5 12 11 3.5 14 HCT ns pF pF UNIT
December 1990
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Philips Semicondu……