器件名称: 2SJ0536
功能描述: Silicon P-Channel MOS FET
文件大小: 31.22KB 共2页
简 介:Silicon MOS FETs (Small Signal)
2SJ0536
Silicon P-Channel MOS FET
Secondary battery pack (Li ion battery, etc.) For switching
2.1±0.1 0.425 1.25±0.1 0.425
unit: mm
q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. q Low-voltage drive (Vth: 1 to 2V) q Low Ron
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.2
0.9±0.1
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 30 ±20 100 200 150 150 55 to +150 Unit V V mA mA mW °C °C
0.7±0.1
0 to 0.1
0.2±0.1
1: Gate 2: Source 3: Drain
EIAJ: SC-70 S-Mini Type Package (3-pin)
Marking Symbol: 2C
s Electrical Characteristics (Ta = 25°C)
Parameter Drain current Gate cut-off current Gate threshold voltage Forward transfer admittance Drain to source ON-resistance Turn-on time Turn-off time Symbol IDSS IGSS Vth | Yfs | RDS(on) ton toff Conditions VDS = 30V, VGS = 0 VGS = ±20V, VDS = 0 VDS = 5V, ID = 1A VDS = 5V, ID = 10mA VGS = 5V, ID = 10mA VDD = 5V, VGS = 5 to 0V, RL = 200 VDD = 5V, VGS = 5 to 0V, RL = 200 1 8 50 100 25 75 min typ max 0.1 ±1 2 Unit A A V mS s s
0.15–0.05
+0.1
0.3–0
+0.1
s Features
1
Silicon MOS FETs (Small Signal)
PD Ta
200 –120
2SJ0536
ID VDS
60
| Yfs | VGS
Forward transfer admittance |Yfs| (mS)
Ta=25C VDS=–5V 50
Allowable power dissi……
