器件名称: 2SJ105
功能描述: For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
文件大小: 525.8KB 共4页
简 介:2SJ105
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ105
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270 (typ.) (IDSS = 5 mA) Complimentary to 2SK330 Small package Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 50 10 200 125 55~125 Unit V mA mW °C °C
Note:
JEDEC ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the TOSHIBA 2-4E1B reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 0.13 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Sym……
