器件名称: 2SJ162
功能描述: Silicon P Channel MOS FET
文件大小: 71.09KB 共6页
简 介:2SJ160, 2SJ161, 2SJ162
Silicon P Channel MOS FET
REJ03G0847-0200 (Previous: ADE-208-1182) Rev.2.00 Sep 07, 2005
Description
Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058
Features
Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
G
1. Gate 2. Source (Flange) 3. Drain
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 5
2SJ160, 2SJ161, 2SJ162
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage 2SJ160 2SJ161 2SJ162 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C VGSS ID IDR Note 1 Pch Tch Tstg Symbol VDSX Value –120 –140 –160 ±15 –7 –7 100 150 –55 to +150 V A A W °C °C Unit V
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage 2SJ160 2SJ161 2SJ162 V (BR) GSS VGS (off) VDS (sat) |yfs| Ciss Coss Crss ton toff Symbol V (BR) DSX Min –120 –140 –160 ±15 –0.15 — 0.7 — — — — — Typ — — — — — — 1.0 900 400 40 230 110 Max — — — — –1.45 –12 1.4 — — — — — Unit V V V V V V S pF pF pF ns ns IG = ±100 A, VDS = 0 ID = –100 mA, VDS = –10 V ID = –7 A, VGS = 0 Note 2 ID = –3 A, VDS = –10 V VGS = 5 V, VDS = –10 V, f = 1 MHz VDD = –20 V ID = –4 A
Note 2
Test Conditions ID = –10 mA……
