器件名称: 2SJ168
功能描述: Silicon P Channel MOS Type
文件大小: 557.52KB 共5页
简 介:2SJ168
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ168
High Speed Switching Applications Analog Switch Applications Interface Applications
Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Yfs| = 100 mS (min) @ID = 50 mA Low on resistance: RDS (ON) = 1.3 (typ.) @ ID = 50 mA Enhancement-mode Complementary to 2SK1062 Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 60 ±20 200 800 200 150 55~150 Unit V V mA mW °C °C
JEDEC JEITA TOSHIBA
― SC-59 2-3F1F
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is the electrostatic sensitive device. Please handle with caution.
Marking
1
2007-11-01
2SJ168
Electrical Characteristics (Ta = 25°C)
Ch……
