器件名称: 2SJ200
功能描述: High Power Amplifier Application
文件大小: 426.58KB 共5页
简 介:2SJ200
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ200
High Power Amplifier Application
z High breakdown voltage z High forward transfer admittance z Complementary to 2SK1529 : VDSS = 180 V : |Yfs| = 4.0 S (typ.) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
1. GATE Characteristics Drainsource voltage Gatesource voltage Drain current (Note 1) Symbol VDSS VGSS ID PD Tch Tstg Rating 180 ±20 10 120 150 55~150 Unit V V A W °C °C 2. DRAIN (HEAT SINK) 3. SOURCE
JEDEC JEITA TOSHIBA
― ― 2-16C1B
Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2006-11-16
2SJ200
Electrical Characteristics (Ta = 25°C)
Characteristics Drain cutoff current Gate leakage current Drainsource breakdown voltage Gatesource cutoff voltage (Note 2) Drainsource saturation voltage Forward transfer admittance Input capacitance Output capacitance R……
