器件名称: 2SK0065
功能描述: For Impedance Conversion In Low Frequency
文件大小: 74.17KB 共3页
简 介:Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
G Diode is connected between gate and source G Low noise voltage
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Drain voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VGDO IDSO IDGO IGSO PD Topr Tstg Ratings 12 12 2 2 2 20 10 to +70 20 to +150 Unit V V mA mA mA mW °C °C
1 2 3 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1
15.6±0.5
(0.8)
0.75 max.
7.6
1: Drain 2: Gate 3: Source NS-B1 Package
I Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Mutual conductance Symbol IDSS* gm NV Conditions VDS = 4.5V, VGS = 0, RS = 2.2k ± 1% VDS = 4.5V, VGS = 0 RS = 2.2k ± 1%, f = 1kHz VDS = 4.5V, RS = 2.2k ± 1% CG = 10pF, A-curve VDS = 4.5V, RS = 2.2k ± 1% CG = 10pF, eG = 100mV, f = 70Hz VDS = 12V, RS = 2.2k ± 1% CG = 10pF, eG = 100mV, f = 70Hz VDS = 1V, RS = 2.2k ± 1% CG = 10pF, eG = 100mV, f = 70Hz 10 9.5 11 min 0.04 300 500 typ max 0.8 Unit mA S 4 V dB
Noise figure
GV1* Voltage gain GV2* GV3*
*
dB
dB
IDSS rank classification and GV value Runk IDSS (mA) GV1 (dB) GV2 (dB) | GV1 GV2 | (dB) P 0.04 to 0.2 > 13 > 12 <3 Q 0.15 to 0.8 > 12 > 11 <3 Note) The part number in the parenthesis s……
