器件名称: 2SK0198
功能描述: For Low-Frequency Amplification
文件大小: 49.87KB 共3页
简 介:Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
3
1.50+0.25 –0.05
2.8+0.2 –0.3
1
2
(0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10
1.1+0.2 –0.1
Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
VDSX VGDO ID IG PD Tch Tstg
30 30 20 10 150 150 55 to +150
V V mA mA mW °C °C
1: Source 2: Drain 3: Gate
0 to 0.1
Parameter
Symbol
Ratings
Unit
1.1+0.3 –0.1
s Absolute Maximum Ratings (Ta = 25°C)
(0.65)
JEDEC: TO-236 EIAJ: SC-59 Mini3-G1 Package
Marking Symbol (Example): 1O
s Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Source cut-off voltage Mutual conductance Symbol IDSS* IGSS VGSC gm Conditions VDS = 10 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 10 A VDS = 10 V, ID = 0.5 mA, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 30 V, ID = 1 mA, GV = 80 dB Rg = 100 k, Function = FLAT 0.1 4 min 0.5 typ max 12 100 1.5 Unit mA nA V mS pF pF mV
13 14 3.5 60
Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure NV
*
IDSS rank classification Runk IDSS (mA……
