器件名称: 2SK0301
功能描述: Silicon N-Channel Junction FET
文件大小: 74.17KB 共3页
简 介:Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.0±0.2 5.1±0.2 4.0±0.2
unit: mm
I Features
13.5±0.5
G Low noies, high gain G High gate to drain voltage VGDO
0.45 –0.1
+0.2
0.45 –0.1
+0.2
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 55 55 ±30 10 250 125 55 to +125 Unit V V V mA mA mW °C °C
1.27
1.27
1 2 3
2.54±0.15
I Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Mutual conductance Symbol IDSS IGSS VGDC VGSC gm
*
Conditions VDS = 10V, VGS = 0 VGS = 30V, VDS = 0 IG = 100A, VDS = 0 VDS = 10V, ID = 10A VDS = 10V, VGS = 0, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100k f = 100Hz
min 1 55 2.5
typ
2.3±0.2
1: Drain 2: Gate 3: Source JEDEC: TO-92 EIAJ: SC-43 TO-92 Type Package
max 20 10
Unit mA nA V
80 5 7.5 6.5 1.9 0.5
V mS pF pF dB
Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure NF
*
IDSS rank classification Runk IDSS (mA) P 1 to 3 Q 2 to 6.5 R 5 to 12 S 10 to 20
Note) The part number in the parenthesis shows conventional part number.
247
Silicon Junction FETs (Smal……
