器件名称: 2SK0601
功能描述: Silicon N-Channel MOS FET
文件大小: 35KB 共2页
简 介:Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
2.6±0.1
4.5±0.1 1.6±0.2
1.5±0.1
0.4max.
45
1.0–0.2
+0.1
0.4±0.08
4.0–0.20
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
*
0.5±0.08 1.5±0.1 3.0±0.15
0.4±0.04
Symbol VDS VGSO ID IDP PD* Tch Tstg
Ratings 80 20 ±0.5 ±1 1 150 55 to +150
Unit
3 2 1
V V A A W °C °C
1: Gate 2: Drain 3: Source EIAJ: SC-62 Mini-Power Type Package (3-pin)
marking
Marking Symbol: O
PC board: Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.7mm.
s Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on)*1 | Yfs | Coss ton
*2
Conditions VDS = 60V, VGS = 0 VGS = 20V, VDS = 0 IDS = 100A, VGS = 0 ID = 1mA, VDS = VGS ID = 0.5A, VGS = 10V ID = 0.2A, VDS = 15V, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz
min
typ
max 10 0.1
Unit A A V
80 1.5 2 300 45 30 8 15 20 3.5 4
V mS pF pF p……
