器件名称: 2SK0655
功能描述: For Switching
文件大小: 76.37KB 共3页
简 介:Silicon MOS FETs (Small Signal)
2SK0655 (2SK655)
Silicon N-Channel MOS FET
unit: mm
For switching I Features
0.75 max.
4.0±0.2 (0.8) 3.0±0.2
2.0±0.2
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 55 to +150 Unit V V mA mA mW °C °C
0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1
15.6±0.5
G High-speed switching G Allowing to supply with the radial taping
(0.8)
7.6 2 3
1
1: Source 2: Drain 3: Gate NS-B1 Package
Internal Connection
D
G
S
I Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time
*
Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff*
Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100A, VGS = 0 ID = 100A, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200 VDD = 5V, VGS = 5 to 0V, RL = 200
min
typ
max 10 50 3.5 50
50 1.5 20 35 10 4 0.5 10 20
15 5 1
Unit A A V V mS pF pF pF ns ns
ton, toff measurement circuit
Vout 200 Vin VDD = 5V Vo……
