器件名称: 2SK0656
功能描述: For Switching
文件大小: 76.87KB 共3页
简 介:Silicon MOS FETs (Small Signal)
2SK0656 (2SK656)
Silicon N-Channel MOS FET
For switching
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 55 to +150 Unit V V mA mA mW °C °C
0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1
1
15.6±0.5
G High-speed switching G Small drive current owing to high input inpedance G High electrostatic breakdown voltage
2
3
(0.8)
0.75 max.
7.6
1: Source 2: Drain 3: Gate NS-B1 Package
Internal Connection
D R1 G R2 S
I Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VOH VOL R1 + R 2 Coss ton
*2 *1
Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100A, VGS = 0 ID = 100A, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDD = 5V, VGS = 1V, RL = 200 VDD = 5V, VGS = 5V, RL = 200
min
typ
max 10
Unit A A V V mS V
40 50 1.5
80
3.5 50
20 4.5
35
1 100 9 200
V k pF pF pF s s
Input capacitance (Common Source) Ciss Output capacitance (Common Source) VDS = 10V, VGS = 0……
