器件名称: 2SK0665
功能描述: Silicon MOS FETs
文件大小: 79.46KB 共3页
简 介:Silicon MOS FETs (Small Signal)
2SK0665 (2SK665)
Silicon N-Channel MOS FET
unit: mm
(0.425)
For switching I Features
0.3+0.1 –0.0 3
0.15+0.10 –0.05
1.25±0.10
(0.65) (0.65) 1.3±0.1 2.0±0.2 10°
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
Symbol VDS VGSO ID IDP PD Tch Tstg
Ratings 20 8 100 200 150 150 55 to +150
Unit V V mA mA mW °C °C
1: Gate 2: Source 3: Drain
0 to 0.1
0.9±0.1
0.9+0.2 –0.1
I Absolute Maximum Ratings (Ta = 25°C)
EIAJ: SC-70 SMini3-G1 Package
Marking Symbol: 3O Internal Connection
D R1 G R2 S
I Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Turn-on time Turn-off time
*1
Symbol IDSS IGSS VDSS Vth RDS(on)*3 | Yfs | VOH VSL R1 + R2*1 ton*2 toff*2
*2
Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100A, VGS = 0 ID = 100A, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDD = 5V, VGS = 1V, RL = 200 VDD = 5V, VGS = 5V, RL = 200 VDD = 5V, VGS = 0 to 5V, RL = 200 VDD = 5V, VGS = 5 to 0V, RL = 200
*3
min 40 20 1.5 20 4.5 100
typ
max 10 80 3.5 50
1 200 1 1
Unit A A V V mS V V k s s
Resistance ratio R1/R2 = 1/50
Vout 200
ton, toff measurement circuit
Pulse measurement
90%
……
