器件名称: 2SJ217-E
功能描述: Silicon P Channel MOS FET
文件大小: 82.51KB 共7页
简 介:2SJ217
Silicon P Channel MOS FET
REJ03G0850-0200 (Previous: NON-084) Rev.2.00 Sep 07, 2005
Description
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SJ217
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value –60 ±20 –45 –180 –45 150 150 –55 to +150
Unit V V A A A W °C °C
Pch Tch
Note 2
Tstg
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss……
