器件名称: 2SJ245
功能描述: SILICON P-CHANNEL MOS FET
文件大小: 39.44KB 共7页
简 介:2SJ245 L , 2SJ245 S
SILICON P-CHANNEL MOS FET
Application
DPAK–1
High speed power switching
4
4
Features
1 2 3
Low on–resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC – DC converter
12
3
2, 4
1
3
1. Gate 2. Drain 3. Source 4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings –60 ±20 –5 –20 –5 20 150 –55 to +150 Unit V V A A A W °C °C
——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 s, duty cycle ≤ 1 % ** Value at Tc=25°C
2SJ245 L , 2SJ245 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min –60 Typ — Max — Unit V Test conditi……