器件名称: 2SK1057
功能描述: Silicon N-Channel MOS FET
文件大小: 40.07KB 共8页
简 介:2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier
2SK1056, 2SK1057, 2SK1058
Outline
TO-3P
D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain
S
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1056 2SK1057 2SK1058 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C VGSS ID I DR Pch* Tch Tstg
1
Symbol VDSX
Ratings 120 140 160 ±15 7 7 100 150 –55 to +150
Unit V
V A A W °C °C
2
2SK1056, 2SK1057, 2SK1058
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1056 V(BR)DSX 2SK1057 2SK1058 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 1. Pulse test V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off 120 140 160 ±15 0.15 — 0.7 — — — — — — — — 1.0 600 350 10 180 60 — 1.45 12 1.4 — — — — — V V V S pF pF pF ns ns VDD = 20 V, ID = 4 A, I G = ±100 A, VDS = 0 I D = 100 mA, VDS = 10 V I D = 7 A, VGD = 0 *1 I D = 3 A, VDS =……
