器件名称: 2SK1162-E
功能描述: Silicon N Channel MOS FET
文件大小: 84.07KB 共7页
简 介:2SK1161, 2SK1162
Silicon N Channel MOS FET
REJ03G0912-0200 (Previous: ADE-208-1250) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Drain (Flange) 3. Source
1
2
S 3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1161, 2SK1162
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C 2SK1161 2SK1162 VGSS ID ID(pulse)* IDR 2 Pch* Tch Tstg
1
Symbol VDSS
Ratings 450 500 ±30 10 30 10 100 150 –55 to +150
Unit V V A A A W
°C °C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage 2SK1161 2SK1162 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 450 500 ±30 — — 2.0 — — 4.0 — — — — — — — — — Typ — — — — — 0.6 0.7 7.0 1050 280 40 15 60 90 45 1.0 350 Max — — ±10 250 3.0 0.8 0.9 — — — — — — — — — — Unit V V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 A, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V 3 ID = 5 A, VGS = 10 V * ID = 5 A, VDS = 10 V * VDS = 10 V, VGS = 0……
